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    Home/    Category/    FET, MOSFET/    FS03MR12A6MA1B

    HYBRID PACK DRIVE SIC AG-HYBRIDD FS03MR12A6MA1B

    FS03MR12A6MA1B image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    FS03MR12A6MA1B
    Description:
    HYBRID PACK DRIVE SIC AG-HYBRIDD
    Stock:
    15519
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    400A(Tj)
  • Drain source voltage (Vdss)
    1200V(1.2kV)
  • FET Type
    6 N Channel
  • FET function
    SiC
  • Gate charge (Qg) at different Vgs (maximum)
    1320nC @ 15V
  • Input capacitance at different Vds (Ciss) (maximum)
    600V
  • On resistance (maximum) for different Ids and Vgs
    3.7 mΩ @ 400A,15V
  • Power - maximum
    20mW
  • Vgs (th) (maximum) for different Ids
    5.55V @ 240mA
  • packing
    pallet
  • series
    HybridPACK™
  • working temperature
    -40°C ~ 150°C(TJ)
  • Encapsulation/Housing
    module
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Base installation
  • Part status
    On sale
    • PDFicoDataSheet
    FS03MR12A6MA1B（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15519,Price reference "real-time change" China/Hongkong。 FS03MR12A6MA1B package/specs, Download FS03MR12A6MA1B、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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